1/6 november 2000 STB30NE06L n-channel 60v - 0.35 w - 30a d 2 pak stripfet? power mosfet n typical r ds (on) = 0.035 w n 100% avalanche tested n low gate charge 100 o c n application oriented characterization n for through-hole version contact sales office description this power mosfet is the latest development of stmicroelectronis unique "single feature size?" strip- based process. the resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. applications n dc motor control n dc-dc & dc-ac converters type v dss r ds(on) i d STB30NE06L 60 v <0.05 w 30 a d 2 pak to-263 (suffixt4) 1 3 absolute maximum ratings ( )pulse width limited by safe operating area. symbol parameter value unit v ds drain-source voltage (v gs = 0) 60 v v dgr drain-gate voltage (r gs = 20 k w ) 60 v v gs gate- source voltage 20 v i d drain current (continuos) at t c = 25c 30 a i d drain current (continuos) at t c = 100c 21 a i dm ( ) drain current (pulsed) 120 a p tot total dissipation at t c = 25c 80 w derating factor 0.53 w/c t stg storage temperature C60 to 175 c t j max. operating junction temperature 175 c internal schematic diagram
STB30NE06L 2/6 thermal data avalanche characteristics electrical characteristics (t case = 25 c unless otherwise specified) off on (1 ) dynamic r thj-case thermal resistance junction-case max 1.875 c/w r thj-amb thermal resistance junction-ambient max 62.5 c/w r thc-sink thermal resistance case-sink typ 0.5 c/w t j maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 20 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 100 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 25 a, v gs = 0 60 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c = 125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 1 1.75 2.5 v i ds(on) static drain-source on resistance v gs = 5v i d = 15 a v gs = 10v i d = 15 a 0.045 0.035 0.06 0.05 w w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs =10 v 30 a symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d =15 a 10 18 s c iss input capacitance v ds = 25v f = 1 mhz v gs = 0 1350 pf c oss output capacitance 195 pf c rss reverse transfer capacitanc- es 58 pf
3/6 STB30NE06L switching on switching off source drain diode (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 30 v i d = 15 a r g = 4.7 w v gs = 4.5 v (see test circuit, figure 3) 25 105 ns ns q g total gate charge v dd =48 v i d =30 a v gs =5 v 20 28 nc q gs gate-source charge 8 nc q gd gate-drain charge 10 nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 30 v i d = 15 a r g = 4.7 w v gs = 4.5 v (resistive load, see fig.3) 50 20 ns ns t d(off) t f t c off-voltage rise time fall time cross-over time v clamp = 48 v i d = 30 a r g = 4.7 w v gs = 4.5 v (inductive load, see fig.5) 15 40 60 ns ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 30 a i sdm ( ) source-drain current (pulsed) 120 a v sd (*) forward on voltage i sd = 30 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 30 a di/dt = 100 a/s v dd = 30v t j = 150 c (see test circuit, figure 3) 80 0.18 4.5 ns m c a electrical characteristics (continued)
STB30NE06L 4/6 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
5/6 STB30NE06L d 2 pak mechanical data dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0 o8o
STB30NE06L 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics ? 2000 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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